Visible-to-near-infrared photodetector based on graphene–MoTe2–graphene heterostructure

论文摘要

Graphene and transition metal dichalcogenides（TMDs）, two-dimensional materials, have been investigated wildely in recent years. As a member of the TMD family, MoTe2 possesses a suitable bandgap of ～1.0 eV for near infrared（NIR）photodetection. Here we stack the MoTe2 flake with two graphene flakes of high carrier mobility to form a graphene–MoTe2–graphene heterostructure. It exhibits high photo-response to a broad spectrum range from 500 nm to 1300 nm. The photoresponsivity is calculated to be 1.6 A/W for the 750-nm light under 2 V/0 V drain–source/gate bias, and 154 mA/W for the 1100-nm light under 0.5 V/60 V drain–source/gate bias. Besides, the polarity of the photocurrent under zero Vds can be efficiently tuned by the back gate voltage to satisfy different applications. Finally, we fabricate a vertical graphene–MoTe2–graphene heterostructure which shows improved photoresponsivity of 3.3 A/W to visible light.

论文目录

• 1. Introduction
• 2. Experiment
•   2.1. Device fabrication
•   2.2. Characterizations
• 3. Results and discussion
•   3.1. Lateral heterostructure
•   3.2. Vertical heterostructure
• 4. Conclusions

文章来源

类型: 期刊论文

作者: 户瑞雪,马新莉,安春华,刘晶

来源: Chinese Physics B 2019年11期

年度: 2019

分类: 基础科学,工程科技Ⅰ辑,信息科技

专业: 无机化工,无线电电子学

单位: State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering,Tianjin University

基金: Project supported by the National Natural Science Foundation of China(Grant No.21405109),the Seed Foundation of State Key Laboratory of Precision Measurement Technology and Instruments,China(Pilt No.1710)

分类号: TN36;TQ127.11

页码: 358-363

总页数: 6

文件大小: 456K

下载量: 16