论文摘要
拓扑半金属是一类不同于以往的全新拓扑量子态,它是近年来凝聚态物理和材料领域的研究新热点之一。Dirac半金属的电子结构主要表现为费米能级附近有四重简并的能带交点,这样的能带交点通常是由双重简并的线性能带相交形成的。对于自旋极化系统,Dirac自旋半金属是一个自旋通道表现为具有Dirac锥的半金属性质,而另外一个自旋通道表现为绝缘体或者半导体性质。本文,主要研究并发现了两类拓扑半金属材料:三维Dirac拓扑半金属β-PbO2和二维Dirac自旋半金属CrO2。主要研究成果如下:1、我们在实验上已制备的材料中发现了一类三维拓扑半金属β-PbO2。在不考虑自旋轨道耦合时,β-PbO2表现为受时间反演和空间反演保护的node-line半金属,其(010)面的局域态密度中清晰可见的“鼓膜状”表面态证实了此时的拓扑性;但系统在考虑自旋轨道耦合作用后,我们发现除了沿Γ-Z高对称线的两个点以外,node-line上的其他能带交点都打开了带隙,系统也由node-line半金属转变成了Dirac半金属,而且其Dirac点是受C4晶格对称保护的,随后通过计算此时的半无限边缘的表面态和费米弧,证明了β-PbO2中Dirac锥的拓扑性质。更值得一提的是,该体系表面态的自旋具有螺旋状的结构,这与拓扑绝缘体是类似的。除此之外,还找到了一种与β-PbO2具有类似的电子性质的三元材料Mg(BiO3)2,它也已经在实验上制备出来。虽然Mg(BiO3)2在HSE杂化泛函下表现为半导体性质,但通过施加拉伸应变它可以由半导体转变为具有能带反转的拓扑半金属。PBE泛函下三元材料Mg(BiO3)2与β-PbO2的电子性质基本是一样的,不考虑自旋轨道耦合时表现为node-line半金属,考虑自旋轨道耦合时表现为Dirac半金属。因此,该工作为实验上实现三维拓扑Dirac半金属的器件应用提供了备选材料和理论基础;2、我们研究发现二维CrO2是一类Dirac自旋半金属材料。结合能、形成能以及声子谱的计算结果分析,证实了它的动力学稳定性和高合成可能性。研究表明CrO2单层结构中具有受不同对称性保护的两类单自旋Dirac锥,其中高对称点K处的Dirac锥是受C3旋转对称保护的,而高对称线Γ-K之间的Dirac锥是受C2旋转对称保护的,此外费米能级附近的电子结构比较干净,不存在其他的电子态影响这些Dirac锥。考虑Hubbard U修正及应变的结果表明,这些单自旋的Dirac锥可以稳定存在。在考虑自旋轨道耦合作用的情况下,这些单自旋通道形成的Dirac锥也只是打开了室温下几乎可以忽略的微小带隙。在投影的体态Dirac锥附近观察到的较明显的边界态,也说明了系统的拓扑特性。该工作为实现拓扑半金属在自旋电子学器件的应用提供了理论基础。
论文目录
文章来源
类型: 硕士论文
作者: 王伟
导师: 孙立忠
关键词: 半金属,自旋半金属,拓扑性,表面态
来源: 湘潭大学
年度: 2019
分类: 基础科学
专业: 物理学
单位: 湘潭大学
分类号: O469
DOI: 10.27426/d.cnki.gxtdu.2019.000487
总页数: 60
文件大小: 3976K
下载量: 42
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