InGaN绿光LED中p-AlGaN插入层对发光效率提升的影响（英文）

论文摘要

基于含有V坑结构的Si（111）衬底InGaN/GaN绿光LED,我们在传统p-AlGaN电子阻挡层之后优化生长一层25 nm的低掺镁p-AlGaN插入层,并获得明显的效率提升。在35 A/cm2的电流密度下,主波长为520 nm的LED外量子效率和光功率分别达到43.6%和362.3 mW,这是截至目前报道的最高记录。通过分析表明,其潜在的物理机制归结于p-AlGaN插入层能够提高空穴从V坑注入的效率。本文提供了一种有效提升发光效率的方法,尤其适合于含有V坑结构的InGaN/GaN LED。

论文目录

1 Introduction

2 Experiments

3 Results and Discussion

4 Conclusion

文章来源

类型: 期刊论文

作者: 余浩,郑畅达,丁杰,莫春兰,潘拴,刘军林,江风益

关键词: 绿光,插入层,外量子效率,空穴注入效率

来源: 发光学报 2019年09期

年度: 2019

分类: 基础科学,信息科技

专业: 物理学,无线电电子学

单位: 南昌大学国家硅基LED工程技术研究中心

基金: 国家重点研发计划(2016YFB040060,2016YFB0400601),国家自然科学基金重点项目(61334001),江西省发展计划(20165ABC28007,20182ABC28003)资助项目~~

分类号: TN312.8;O482.31

页码: 1108-1114

总页数: 7

文件大小: 3874K

下载量: 73

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标签：绿光论文; 插入层论文; 外量子效率论文; 空穴注入效率论文;

InGaN绿光LED中p-AlGaN插入层对发光效率提升的影响（英文）

论文摘要

论文目录

文章来源

相关论文文献

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