Optical and electrical properties of crystalline indium tin oxide thin film deposited by vacuum evaporation technique

论文摘要

Indium tin oxide（ITO） thin film was deposited on glass substrate by means of vacuum evaporation technique and annealed at 200 °C, 300 °C and 400 °C in air for 1 h. The characterization and properties of the deposited film samples were analyzed by X-ray diffraction（XRD）, scanning electron microscopy（SEM）, and UV-VIS-NIR spectroscopy techniques. From the XRD patterns, it was found that the deposited thin film was of crystalline at an annealing temperature of 400 °C. The crystalline phase was indexed as cubic structure with lattice constant and crystallite size of 0.511 nm and 40 nm, respectively. The SEM images showed that the films exhibited uniform surface morphology with well-defined spherical grains. The optical transmittance of ITO thin film annealed at 400 °C was improved from 44% to 84% in the wavelength range from 250 nm to 2 100 nm and an optical band gap was measured as 3.86 e V. Hall effect measurement was used to measure the resistivity and conductivity of the prepared film.

论文目录

文章来源

类型: 期刊论文

作者: Md.Mottaleb Hosen,A.K.M.Atique Ullah,Md.Mahbubul Haque,S.M.Abdur Rahim,K.M.Abdus Sobahan,M.N.I.Khan

来源: Optoelectronics Letters 2019年05期

年度: 2019

分类: 信息科技,工程科技Ⅰ辑,工程科技Ⅱ辑

专业: 材料科学,工业通用技术及设备,无线电电子学

分类号: TN20;TB383.2

页码: 356-359

总页数: 4

文件大小: 980K

下载量: 20

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